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Fully Automated Laser Boron Ooping Machine

    Fully Automated Laser Boron Ooping Machine

    The Fully Automated Laser Boron Doping Machine is an advanced laser processing system specifically engineered for selective boron doping in high-efficiency solar cell and semiconductor device manufacturing. This equipment utilizes high-precision laser energy to locally introduce boron atoms into silicon wafers, forming p-type semiconductor regions with precise control over depth and concentration.
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Product Introduction

Traditional thermal diffusion methods require long processing times, high energy consumption, and complex chemical management. In contrast, laser boron doping offers a clean, fast, and controllable alternative — reducing thermal budgets and improving production yield.

The system integrates full automation, real-time vision alignment, multi-axis motion control, and intelligent laser energy feedback, ensuring exceptional uniformity and repeatability across every wafer.

Designed for large-scale industrial production, Inte Laser’s Boron Doping Equipment enables manufacturers to achieve high conversion efficiency solar cells while maintaining environmental sustainability and cost-effectiveness.

Product Features

1. Fully Automated Workflow

From wafer loading to doping and unloading, all operations are handled by an intelligent automation system.
The built-in robotic handling system ensures stable, consistent processing, eliminating human error and reducing labor intensity.

2. High Precision and Uniformity

Equipped with a high-energy nanosecond or picosecond laser source, the system achieves micron-level control over doping regions.
Advanced optical path optimization and feedback mechanisms guarantee precise boron diffusion depth and uniform concentration across the wafer surface.

3. Environmentally Friendly Processing

The laser doping method eliminates the need for chemical diffusion sources and furnace processes, generating zero chemical waste.
This approach supports green, sustainable manufacturing and aligns with international environmental standards.

4. Non-Contact Laser Process

The process is completely contact-free, preventing micro-cracks, contamination, and mechanical deformation.
It ensures superior wafer surface quality and enhances product reliability during subsequent manufacturing stages.

5. Intelligent Control Software

The system comes with a user-friendly software interface that supports:

Real-time process monitoring

Automatic focus adjustment

Doping pattern customization

Data recording and analysis

Integration with MES production management systems

This digitalized control platform enables traceable production and smart factory compatibility.

6. Scalable and Customizable Design

The machine can be adapted for different wafer sizes (M2–M12), doping requirements, and production line configurations.
Inte Laser offers tailored solutions for clients in the solar energy and semiconductor sectors, ensuring compatibility with specific process flows.

7. High Throughput and Stability

Optimized scanning algorithms and galvanometer technology ensure fast processing speeds while maintaining long-term operational stability.
Industrial-grade components guarantee continuous operation in 24/7 production environments.

Application Scenarios

The Fully Automated Laser boron doping machine is widely used in high-end manufacturing fields where precision, consistency, and environmental performance are critical.

1. Photovoltaic Industry

High-Efficiency Solar Cells: For selective boron doping to form p-type emitters and back surface fields (BSF).

PERC, TOPCon, and HJT Cells: Ideal for advanced solar cell architectures requiring local boron doping regions.

Bifacial Solar Cells: Enhances front and rear surface electrical performance for maximum energy output.

2. Semiconductor and Electronics

Used for p-type doping in silicon-based semiconductor wafers and integrated circuits.

Enables precise electrical performance control in device fabrication and microelectronics.

3. Research and Development

Suitable for universities, laboratories, and R&D institutes studying next-generation doping technologies.

Supports process simulation and material testing for experimental and pilot-scale applications.

4. New Energy Components

Applicable to power battery electrode materials or silicon-based sensor manufacturing, where controlled surface doping improves conductivity and device stability.


Technology Advantages

Advantages

Adjusted spatial and temporal distribution of laser pulses for lower damage to the surface;

Laser direct doping eliminates the need for secondary diffusion;

Finer laser power control methods for meticulously opti-mized doping effects;

High-speed and high-precision scanning system for pre-cise alignment of gridlines;

Dual detection system for loading and unloading, enhanc- ing the production of high-quality battery cells;

Optional manual or AGV automated loading and unloading.


Technical Parameters


Laser type

Ultraviolet Laser/Green Laser/Infrared Laser

Processing area

166mmx166mm--230mmx230mm
(customized)

Machine size

5200mmx2740mmx2200mm
(Prevail in kind)

Machine processing accuracy

≤0.02mm

Electric power loading

3KW

Machine weight

4000KG

Environment requirements Temperature/Humidity

Humidity :30% to 60%, no condensation
Temperature :22℃±2



Operation mode

Fully Automated Laser Boron Ooping Machine

Quality and Reliability

Inte Laser adheres to strict quality management systems to ensure every machine meets international standards.
All equipment undergoes precision optical calibration, mechanical stability testing, and continuous operation validation before delivery.

The machine’s rigid frame structure, anti-vibration platform, and stable laser source ensure consistent performance over long-term operation.
Its modular design allows easy maintenance, quick part replacement, and system upgrades, extending overall equipment lifespan.

Customer Benefits

Higher conversion efficiency for solar cells through precise doping control

Reduced operational costs via automation and energy-efficient processes

Minimized defects due to non-contact processing

Fast ROI driven by productivity and yield improvements

Sustainable manufacturing with zero emissions and low energy use

FAQs (Frequently Asked Questions)

Q1: What is laser boron doping and how does it work?
A1: Laser boron doping uses high-energy laser beams to introduce boron atoms into silicon wafers, forming p-type regions. The localized heating melts a thin layer of silicon, allowing boron atoms to diffuse precisely into the substrate.

Q2: How is it different from traditional boron diffusion furnaces?
A2: Unlike thermal diffusion, laser doping is faster, cleaner, and requires no chemical gases. It offers localized control, reduces wafer stress, and enables selective doping for advanced solar cell structures.

Q3: What wafer sizes can the machine handle?
A3: The system supports various wafer formats from M2 to M12, and can be customized for non-standard dimensions upon request.

Q4: Can it be integrated into existing production lines?
A4: Yes, Inte Laser machines are designed for seamless integration with automated wafer handling and MES systems, supporting Industry 4.0 compatibility.

Q5: What type of maintenance is required?
A5: The system is low-maintenance; regular cleaning and periodic optical calibration are typically sufficient for stable operation.

Q6: What is the throughput of the equipment?
A6: Depending on configuration and process parameters, the system can process hundreds of wafers per hour with consistent quality.

Q7: Does Inte Laser provide customized process development?
A7: Yes. Our R&D team collaborates with customers to optimize laser parameters, process recipes, and integration solutions tailored to specific applications.

Q8: How does the system improve solar cell efficiency?
A8: By ensuring uniform boron diffusion and precise doping depth, it enhances charge carrier lifetime and reduces series resistance, leading to higher conversion efficiency.


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